Towards highly sensitive strain sensing based on nanostructured materials

Dzung Viet Dao, Tung Thanh Bui, Koichi Nakamura, Van Thanh Dau, Takeo Yamada, Kenji Hata and Susumu Sugiyama

Abstract

This paper presents our recent theoretical and experimental study of piezo-effects in nanostructured materials for highly sensitive, high resolution mechanical sensors. The piezo-effects presented here include the piezoresistive effect in a silicon nanowire (SiNW) and single wall carbon nanotube (SWCNT) thin film, as well as the piezo-optic effect in a Si photonic crystal (PhC) nanocavity. Firstly, the electronic energy band structure of the silicon nanostructure is discussed and simulated by using the First-Principles Calculations method. The result showed a remarkably different energy band structure compared with that of bulk silicon. This difference in the electronic state will result in different physical, chemical, and therefore, sensing properties of silicon nanostructures. The piezoresistive effects of SiNW and SWCNT thin film were investigated experimentally. We found that, when the width of  110  p-type SiNW decreases from 500 to 35 nm, the piezoresistive effect increases by more than 60%. The longitudinal piezoresistive coefficient of SWCNT thin film was measured to be twice that of bulk p-type silicon. Finally, theoretical investigations of the piezo-optic effect in a PhC nanocavity based on Finite Difference Time Domain (FDTD) showed extremely high resolution strain sensing. These nanostructures were fabricated based on top-down nanofabrication technology. The achievements of this work are significant for highly sensitive, high resolution and miniaturized mechanical sensors