Comparative study of InGaN and InGaAs based dopingless TFET with different gate engineering techniques

Monika Sharma, Rakhi Narang, Manoj Saxena and Mridula Gupta

Abstract

In this paper, we have presented the comparative analysis of InGaN and InGaAs based DL TFETs with different gate engineering methods for lowering the sub-threshold swing and increasing the I _ON/I _OFF ratio. The 2D simulation study is carried out for comparing the results of conventional DL TFET with three gate engineered structures. InGaAs doped hetero-dielectric hetero-gate DL TFET shows best result of about ~2.217 times increase in the I _ON/I _OFF, 40.17% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Similarly, InGaN doped HD-HG DL TFET shows ~8.514 times increase in the I _ON/I _OFF, 45.83% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Finally the result shows InGaAs based HD-HG DL TFET as a favourable device for low power and digital applications.